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| FDS6688S March 2004 FDS6688S 30V N-Channel PowerTrench SyncFETTM General Description The FDS6688S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6688S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. Features * 16 A, 30 V. RDS(ON) = 6.0 m @ VGS = 10 V RDS(ON) = 7.5 m @ VGS = 4.5 V * * Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching * High power and current handling capability Applications * DC/DC converter * Motor drives D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 20 (Note 1a) Units V V A W 16 50 2.5 1.2 1 -55 to +125 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 C/W Package Marking and Ordering Information Device Marking FDS6688S Device FDS6688S Reel Size 13'' Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDS6688S Rev C (W) FDS6688S Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Test Conditions VGS = 0 V, ID = 1 mA Min Typ 30 28 Max Units V mV/C Off Characteristics ID = 1 mA, Referenced to 25C VDS = 24 V, VGS = 20 V, VDS = VGS, VGS = 0 V VDS = 0 V ID = 1 mA 1 1.4 -4 4.8 5.7 6.5 74 6.0 7.5 500 100 A nA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance 3 V mV/C m ID = 1 mA, Referenced to 25C VGS = 10 V, ID = 16 A ID = 14.5 A VGS = 4.5 V, VGS=10 V, ID =16 A, TJ=125C VDS = 10 V, ID = 16 A gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd VSD trr IRM Qrr S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 3290 890 290 pF pF pF 22 22 46 96 78 44 ns ns ns ns nC nC nC nC 700 mV ns A nC f = 1.0 MHz 1.5 Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 12 12 30 60 Total Gate Charge at VGS=10V Total Gate Charge at VGS=5V Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge VDS = 15 V, ID = 16 A 56 31 8.2 9.0 Drain-Source Diode Characteristics and Maximum Ratings VGS = 0 V, IS = 3.5 A (Note 2) 380 30 IF = 16 A, diF/dt = 300 A/s (Note 3) 2 31 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50/W when mounted on a 1 in2 pad of 2 oz copper b) 105/W when 2 mounted on a .04 in pad of 2 oz copper c) 125/W when mounted on a minimum pad. See "SyncFET Schottky body diode characteristics" below Scale 1 : 1 on letter size paper Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS6688S Rev C (W) FDS6688S Typical Characteristics 50 2.6 VGS = 10V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 1 VGS = 2.5V 40 ID, DRAIN CURRENT (A) 4.5V 3.5V 30 2.5V 20 3.0V 3.5V 4.0V 10 4.5V 6.0V 10V 0 0 0.25 0.5 0.75 VDS, DRAIN-SOURCE VOLTAGE (V) 2.0V 0 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.016 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = 16.0A VGS =10V ID = 8.0A 0.014 0.012 0.01 0.008 0.006 1.4 1.2 1 TA = 125oC 0.8 TA = 25oC 0.6 -50 -25 0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C) 100 125 0.004 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 50 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V 40 ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) 10 VGS = 0V 30 1 TA = 125oC 25oC TA = 125oC 20 25oC 10 0.1 -55 C o 0.01 -55 C o 0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3 0.001 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6688S Rev C (W) FDS6688S Typical Characteristics (continued) 10 5000 ID = 16.0A VDS = 10V 4000 f = 1MHz VGS = 0 V 20V VGS, GATE-SOURCE VOLTAGE (V) 8 CAPACITANCE (pF) 6 3000 15V Ciss 4 2000 Coss 1000 Crss 2 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 100 100us 1ms 10ms 100ms 1s P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 40 SINGLE PULSE RJA = 125C/W TA = 25C 30 1 10s DC VGS = 10V SINGLE PULSE o RJA = 125 C/W TA = 25oC 20 0.1 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJC(t) = r(t) * RJC RJC = 125 C/W 0.1 0.1 0.05 0.02 P(pk 0.01 0.01 t1 t2 TJ - TC = P * RJC(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6688S Rev C (W) FDS6688S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6688S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) TA = 125oC 0.01 TA = 100oC 0.001 CURRENT : 0.8A/div 0.0001 TA = 25oC 0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 TIME : 12.5ns/div Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDS6688S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6688). CURRENT : 0.8A/div TIME : 12.5ns/div Figure 13. Non-SyncFET (FDS6688) body diode reverse recovery characteristic. FDS6688S Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I9 |
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